介绍了光刻法石墨烯的制备方法, 分析了光刻工艺过后石墨烯方阻升高的不良机理, 并给出了相应的优化方案。首先, 根据半导体工艺研发制程完成石墨烯图案化工艺方案, 并对工艺方案进行有效优化。接着, 分析了石墨烯光刻法图案化后方阻升高的机理。最后, 通过改善工艺方案, 增加金属湿法刻蚀的步骤, 解决石墨烯方阻升高的问题。实验结果表明: 通过光刻法制得的石墨烯具有更高的图案精细度, 关键尺寸可达到5 μm。双层石墨烯膜的方阻在光刻法图案化后, 通过工艺改善可以保持原始膜最初阻值约330 Ω/□, 甚至可以降低到270 Ω/□左右。光刻法图案化石墨烯技术, 既能保证石墨烯图案尺寸精度, 又可以保持甚至降低石墨烯方阻值, 适合于量产开发。

The preparation method and square resistance improvement method of patterning graphene by photolithography were introduced. The process and the bad mechanism for increasing square resistance of patterning graphene by photolithography were analyzed. Firstly, the patterning process of graphene was completed and optimized effectively through the development of the semiconductor process. Then, the mechanism for increasing square resistance of patterning graphene by photolithography was analyzed. Finally, the problem on increasing square resistance of patterning graphene by photolithographyg was improved by adjusting the process steps to increase the metal wet etching adjustment. The experimental results show that the dimensional accuracy of patterning graphene can be improved by photolithography, which the critical dimensions can reach 5 μm. The initial square resistance of double-layer graphene films after photolithographic patterning can be kept at about 330 Ω/□, and even reduced to 270 Ω/□ by process improvement. Patterning graphene by photolithography can not only ensure the degree of refinement, but also improve the square resistance of graphene film, which is more suitable for mass production and development.