Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

Swe Z. Oo; Antulio Tarazona; Ali Z. Khokhar; Rafidah Petra; Yohann Franz; Goran Z. Mashanovich; Graham T. Reed; Anna C. Peacock; Harold M. H. Chong

doi:doi:10.1364/PRJ.7.000193

Photonics Research, 2019, 7 (2): 02000193, Published Online: Feb. 19, 2019

Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

Swe Z. Oo ^1,2,*Antulio Tarazona ²Ali Z. Khokhar ²Rafidah Petra ¹Yohann Franz ²Goran Z. Mashanovich ²Graham T. Reed ^2,3Anna C. Peacock ²Harold M. H. Chong ¹

Author Affiliations

¹ School of Electronics and Computer Science, University of Southampton, SO17 1BJ, UK

² Optoelectronics Research Centre, University of Southampton, SO17 1BJ, UK

³ School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore

Abstract

We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm 1, peak width (full width at half-maximum) of 68.9 cm 1, and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the 1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.

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Swe Z. Oo, Antulio Tarazona, Ali Z. Khokhar, Rafidah Petra, Yohann Franz, Goran Z. Mashanovich, Graham T. Reed, Anna C. Peacock, Harold M. H. Chong. Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices[J]. Photonics Research, 2019, 7(2): 02000193.

Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

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