Photonics Research, 2019, 7 (3): 03000289, Published Online: Feb. 20, 2019   

Demonstration of an on-chip TE-pass polarizer using a silicon hybrid plasmonic grating Download: 621次

Author Affiliations
1 State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
2 Peking University Shenzhen Research Institute, Shenzhen 518057, China
Abstract
An on-chip, high extinction ratio transverse electric (TE)-pass polarizer using a silicon hybrid plasmonic grating is proposed and experimentally demonstrated. Utilizing plasmonics to manipulate the effective index and mode distribution, the transverse magnetic mode is reflected and absorbed, while the TE mode passes through with relatively low propagation loss. For a 6-μm-long device, the measurement result shows that the extinction ratio in the wavelength range of 1.52 to 1.58 μm varies from 24 to 33.7 dB and the insertion loss is 2.8–4.9 dB. Moreover, the structure exhibits large alignment tolerance and is compatible with silicon-on-insulator fabrication technology.

Bowen Bai, Fenghe Yang, Zhiping Zhou. Demonstration of an on-chip TE-pass polarizer using a silicon hybrid plasmonic grating[J]. Photonics Research, 2019, 7(3): 03000289.

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