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化学抛光对硅基异质结太阳电池性能的影响

Influence of Chemical Polishing on Performances of Silicon Heterojunction Solar Cells

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摘要

针对非晶硅薄膜沉积时金字塔沟壑处容易出现外延生长的问题,采用化学抛光液CP133对硅片表面进行了抛光处理。研究结果表明,抛光使得金字塔底部区域形貌由“V”型变成了“U”型,明显改善了非晶硅/晶体硅界面的钝化效果。抛光溶液温度低于30 ℃时难以发挥腐蚀作用,但当溶液的起始温度升高至35 ℃时,获得了较好的抛光效果。采用质量分数为1%的NaOH溶液制绒且抛光时间为30 s时,太阳电池性能较佳。

Abstract

Aiming to avoid the local epitaxial growth of amorphous silicon films in the pyramidal valleys of the textured silicon wafers, a chemical polishing mixture named CP133 is used to polish the textured crystalline silicon (c-Si) surfaces. The research results show that the morphologies of the pyramidal valleys change from V shape to U shape, which clearly improves the passivation effect at the hydrogenated amorphous silicon/crystalline silicon interface. When the temperature is lower than 30 ℃, the solution is difficult to react with the crystalline silicon. However, the problem can be solved by the increase of the solution temperature up to 35 ℃. The performance of the solar cells is relatively good when the polishing time is 30 s and the NaOH texturing solution has a mass fraction of 1%.

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中图分类号:O649

DOI:10.3788/lop56.062402

所属栏目:表面光学

基金项目:国家自然科学基金(61474065,61504069)、高等学校学科创新引智计划(简称111计划)(B16027)、山东省自然科学基金博士基金(ZR2017BEE061)、菏泽学院科研基金博士基金(XY17BS01)

收稿日期:2018-08-31

修改稿日期:2018-09-01

网络出版日期:2018-10-19

作者单位    点击查看

姜元建:菏泽学院物理与电子工程学院, 山东 菏泽 274015
张晓丹:南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室, 天津 300071
赵颖:南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室, 天津 300071

联系人作者:姜元建(jiyjok3@sina.com)

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引用该论文

Jiang Yuanjian,Zhang Xiaodan,Zhao Ying. Influence of Chemical Polishing on Performances of Silicon Heterojunction Solar Cells[J]. Laser & Optoelectronics Progress, 2019, 56(6): 062402

姜元建,张晓丹,赵颖. 化学抛光对硅基异质结太阳电池性能的影响[J]. 激光与光电子学进展, 2019, 56(6): 062402

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