太赫兹科学与电子信息学报, 2019, 17 (1): 169, 网络出版: 2019-04-07
31~38 GHz宽带高效率GaAs中功率放大器芯片
31–38 GHz broadband high efficiency GaAs medium power amplifier MMIC
功率放大器 毫米波 砷化镓 宽带 高效率 单片集成电路 power amplifier millimeter wave GaAs broadband high efficiency Monolithic Microwave Integrated Circuit
摘要
为实现毫米波放大器芯片的宽带、高增益和高效率,基于GaAs pHEMT工艺实现高增益,采用四级级联拓扑结构拓展带宽,利用电流复用结构降低直流功耗,采用T型电抗匹配技术实现最佳输出功率和效率匹配,成功实现了一款31~38 GHz频段的毫米波宽带高效率功率放大器芯片。测试结果表明,该功率放大器芯片在31~38 GHz宽带范围内,线性增益为26~29 dB,饱和输出功率为21.5 dBm,动态电流低于100 mA,饱和效率≥37%,在32~35 GHz内最高效率达45%。
Abstract
In order to achieve broadband millimeter-wave amplifier with high gain and efficiency, GaAs pHEMT technology is employed for obtaining high gain; four-stage circuit topology is utilized for expanding bandwidth; current reuse technology is adopted for reducing DC power consumption; and reactance matching technology is implemented for optimizing output power and efficiency. As result, 31-38 GHz GaAs medium power amplifier Monolithic Microwave Integrated Circuit(MMIC) is successfully realized with broadband and high efficiency. In the frequency form 31 GHz to 38 GHz, the test results show excellent performances with 26-29 dB gain, 21.5 dBm output power, more than 37% Power Added Efficiency(PAE) and only 100 mA dynamic current. Especially, the efficiency of power amplifier has reached 45% at frequency from 32 GHz to 35 GHz.
韩芹, 刘永强, 刘会东, 魏洪涛. 31~38 GHz宽带高效率GaAs中功率放大器芯片[J]. 太赫兹科学与电子信息学报, 2019, 17(1): 169. HAN Qin, LIU Yongqiang, LIU Huidong, WEI Hongtao. 31–38 GHz broadband high efficiency GaAs medium power amplifier MMIC[J]. Journal of terahertz science and electronic information technology, 2019, 17(1): 169.