通过用喷墨打印制备的ZnO/IGZO异质结代替单层半导体沟道克服了氧化物缺陷导致的电子传输限制。ZnO/IGZO异质结晶体管表现出带状电子传输，迁移率比单层IGZO或ZnO TFT分别增大了约9倍和19倍，达到6.42 cm2/(V·s)。开关比分别增大了2个和4个数量级，达到1.8×108。性能的显著改善源自于IGZO和ZnO异质界面间由于导带的大偏移量而形成的二维电子气。

In this work, the electron transport limitations caused by oxide defects was overcome by replacing single layer semiconductor channel with a ZnO/IGZO heterojunction prepared by inkjet printing. It was found that ZnO/IGZO transistor exhibited banded electron transport, and the mobility was increased by about 9 times and 19 times, respectively, to 6.42 cm2/(V·s) compared with single layer IGZO or ZnO TFT. The switch ratio was increased by 2 and 4 orders of magnitude respectively, which can reach 1.8×108. Significant improvement in performance was associated with the two-dimensional electron gas formed between the IGZO and ZnO heterointerfaces due to the large offset of the conduction band.