对 nBn势垒型 InAsSb/AlAsSb中波红外探测器材料进行了系统深入的理论研究。通过理论计算势垒层的厚度、组分和掺杂等结构参数对器件能带结构、暗电流和光电流的影响，分析了势垒性的温度特性、器件输运特性，揭示了 nBn势垒型中波红外探测器高温工作的机制，探索降低器件暗电流的方法。完成 nBn势垒型锑化物材料系统的优化设计，为高温工作的锑化物中波红外探测器研制提供理论基础和支持。

Medium wavelength infrared (MWIR)-based nBn InAsSb/AlAsSb detectors, also referred to as bariodes are theoretically and systematically examined in this study. The heterojunction barrier height between the active regions of the barrier has a decisive influence on hole transportation and the dark current. The thickness, composition, doping in the barrier layer, and the doping in the absorption layer were calculated pointing out the optimal structure parameter design and lower dark current. The results obtained from the theoretical analysis are significant for the development of InAsSb/AlAsSb high operating temperature MWIR detectors.