报道了液氮温度下对 HgCdTe器件进行电容测试的方法。标定了仪器寄生电容以及杜瓦寄生电容，并利用该测试结果计算得到 PN结区附近的载流子浓度和相应的深度等数据。对比了碲镉汞常规 PN结器件与雪崩光电二极管（APD）器件的耗尽层宽度以及 N区载流子浓度。

A method for measuring the capacitance of HgCdTe devices at liquid nitrogen temperature was discussed in this article. The instrument and the parasitic capacitance of the dewar were both calibrated, after which the carrier concentration near the PN junction and its corresponding depth were computed from C-V curves. Finally, the width of the depletion layer and the carrier concentration in the N region of a HgCdTe conventional PN junction device were compared to those of an avalanche photodiode (APD) device.