为了优化垂直腔半导体光放大器(VCSOA)在不同应用中的性能, 以及用通用计算方法获得准确的端面反射率, 考虑到器件内部光场分布特点, 采用角频谱理论和传输矩阵的方法, 取得了器件中分布布喇格反射器(DBR)等效反射率与光束半值谱宽的数据, 进行了理论分析和实验验证。结果表明, 等效反射率随着结构周期增加而变大, 但是当周期大于25时基本不再变化; 与只考虑正入射情况相比, 修正后的DBR等效反射率小了2%~4%; 等效反射率随着半值谱宽θFWHM增大而减小。该研究为准确计算膜堆层数对DBR等效反射率的影响提供理论指导, 优化了VCSOA的工作性能。

In order to optimize the performance of vertical cavity semiconductor optical amplifiers(VCSOA) in different applications and obtain accurate reflectivity with the general calculation method, considering the characteristics of light field distribution inside the device, the equivalent reflectivity of the distributed Bragg reflector(DBR) and the full width at half maximum of the beam in the device were obtained by using angular spectrum theory and transmission matrix method. The theoretical analysis and experimental verification were carried out. The results show that the equivalent reflectivity increases with the increase of structure period. However, when the period is greater than 25, it will not change any more. Compared with the case of normal incidence only, the revised equivalent reflectivity of DBR is less 2%~4%. Equivalent reflectance decreases with the increase of full width at half maximum θFWHM. The study provides theoretical guidance for accurately calculating the effect of stack number on equivalent reflectivity of DBR and optimizing the performance of VCSOA.