半导体光电, 2019, 40 (4): 489, 网络出版: 2019-09-20  

795nm单偏振稳定垂直腔面发射激光器的研究

Study on 795nm Single Polarization Stabilized Vertical Cavity Surface Emitting Laser
作者单位
北京工业大学 光电子技术教育部重点实验室, 北京 100124
摘要
基于非对称氧化技术, 引入氧化孔径横向光场损耗各向异性, 使得TE/TM偏振光功率差进一步增加, TM偏振得到有效抑制, 从而实现795nm垂直腔面发射激光器单偏振稳定输出。实验结果显示: 当氧化孔径为7μm×5.5μm时, 不同温度下偏振抑制比均在10dB以上, 最高达到16.56dB; 当氧化孔径为20μm×18μm时, 偏振抑制比也可以达到15.96dB。最终, 得到偏振抑制比为16dB、水平发散角为8.349°、垂直发散角为9.340°的单偏振稳定输出795nm垂直腔面发射激光器(VCSEL), 为实现单偏振高光束质量VCSEL激光光源提供了实验基础。
Abstract
Based on the technology of asymmetric oxidation, the anisotropy of transverse optical field loss was introduced to increase the power difference of TE/TM polarized light and effectively suppress TM polarization, thus to realize a stable output of single polarization of 795nm vertical cavity surface emitting laser. The experimental results show that the polarization suppression ratio is above 10dB at different temperatures when the oxidation aperture is 7μm×5.5μm, and the maximum is 16.56dB. When the oxidation aperture is 20μm×18μm, the polarization suppression ratio can also reach 15.96dB. Finally, the 795nm-VCSEL with single polarization and stable output was prepared, the polarization suppression ratio of 16dB, the horizontal divergence angle of 8.349° and the vertical divergence angle of 9.340° were realized.

梁津, 关宝璐, 胡丕丽, 张峰, 董晨, 王菲, 王志鹏. 795nm单偏振稳定垂直腔面发射激光器的研究[J]. 半导体光电, 2019, 40(4): 489. LIANG Jin, GUAN Baolu, HU Pili, ZHANG Feng, DONG Chen, WANG Fei, WANG Zhipeng. Study on 795nm Single Polarization Stabilized Vertical Cavity Surface Emitting Laser[J]. Semiconductor Optoelectronics, 2019, 40(4): 489.

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