首页 > 论文 > 半导体光电 > 40卷 > 4期(pp:494-498)

Ni-Au/AlN/Si器件的深能级瞬态谱研究

Study on Deep-Level Transient Spectroscopy of Ni-Au/AlN/Si MIS Capacitors

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

对GaN器件制备过程中AlN缓冲层相关的电活性缺陷进行了C-V和深能级瞬态谱(DLTS)研究。C-V研究结果表明, 制备态Ni-Au/AlN/Si MIS器件中, 靠近AlN/Si界面处的掺杂浓度为4.4×1017cm-3, 明显高于Si衬底的1.4×1016cm-3, 意味着制备态样品中Al原子已经向衬底硅中扩散。采用退火工艺研究了GaN器件制备过程中的热影响以及热处理前后电活性缺陷在硅衬底中的演变情况, 发现退火处理后, Al原子进一步向衬底硅中更深处扩散, 扩散深度由制备态的500nm左右深入到1μm附近。DLTS研究结果发现, 在Si衬底中与Al原子扩散相关的缺陷为Al-O配合物点缺陷。DLTS脉冲时间扫描表明, 相比于制备态样品, 退火态样品中出现了部分空穴俘获时间常数更大的缺陷, 退火处理造成了点缺陷聚集, 缺陷类型由点缺陷逐渐向扩展态缺陷发展。

Abstract

The electrical properties of AlN with metal-insulator-semiconductor (MIS) capacitors were studied by capacitance-voltage (C-V) measurement and deep-level transient spectroscopy (DLTS). It is demonstrated that the in-diffusion of Al leads to a larger doping density of 4.4×1017cm-3 close to the AlN/Si interface, which is quite higher than that of silicon substrate of 1.4×1016cm-3. The thermal influence in the preparation of GaN devices and the evolution of electrical activity defects in silicon substrate before and after heat treatment were studied by annealing process. It is found that after annealing, Al atoms diffuse deeper into silicon substrate and the diffusion depth increases from 500nm to 1mm. DLTS results show the Al-related defects in silicon substrate are Al-O complex point defects. The fact that the deep-level parameters (activation energy ET and hole capture cross section σp) change after annealing indicates that different types of Al-related complexes or clusters are formed before and after in situ annealing. DLTS pulse duration scan results show that defects with higher time constant of hole trapping appear in the annealing samples. The annealing process leads to the gathering of point defects, and there is a tendency for point defects to gather into extended defects.

中国激光微信矩阵
补充资料

中图分类号:O474;O484.1

DOI:10.16818/j.issn1001-5868.2019.04.010

所属栏目:材料、结构及工艺

收稿日期:2019-04-10

修改稿日期:--

网络出版日期:--

作者单位    点击查看

王 冲:电子科技大学 光电科学与工程学院, 成都 610054比利时IMEC欧洲微电子中心, 鲁文 B-3001
赵 明:比利时IMEC欧洲微电子中心, 鲁文 B-3001
Eddy SIMOEN:比利时IMEC欧洲微电子中心, 鲁文 B-3001
李 伟:电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054

联系人作者:李伟(wli@uestc.edu.cn)

备注:王 冲(1989-), 男, 博士研究生, 主要从事半导体材料电活性缺陷方向的研究。

【1】Amano H, Sawaki N, Akasaki I, et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer[J]. Appl. Phys. Lett., 1986, 48(5): 353-355.

【2】Dadgar A. Sixteen years GaN on Si[J]. Phys. Status Solidi(B), 2015, 252(5): 1063-1068.

【3】Leys M, Cheng K, Derluyn J, et al. Growth and characterization of unintentionally doped GaN grown on silicon (111) substrates[J]. J. of Crystal Growth, 2008, 310(23): 4888-4890.

【4】Cheng K, Leys M, Degroote S, et al. AlGaN/GaN high electron mobility transistors grown on 150mm Si (111) substrates with high uniformity[J]. Jap. J. Appl. Phys., 2008, 47(3): 1553-1555.

【5】Cheng K, Leys M, Derluyn J, et al. AlGaN-based heterostructures grown on 4 inch Si (111) by MOVPE[J]. Phys. Status Solidi (C), 2008, 5(6): 1600-1602.

【6】Ishikawa H, Zhao G, Nakada N, et al. GaN on Si substrate with AlGaN/AlN intermediate layer[J]. Jap. J. Appl. Phys., 1999, 38: L492.

【7】Strittmatter A, Krost A, Strabburg M, et al. Low-pressure metal organic chemical vapor deposition of GaN on silicon (111) substrates using an AlAs nucleation layer[J]. Appl. Phys. Lett., 1999, 74(9): 1242-1244.

【8】Zhao M, Liang H, Kandaswamy P K, et al. MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200mm Si (111) substrate for breakdown voltage enhancement[J]. Phys. Status Solidi (C), 2016, 13(5-6): 311-316.

【9】Zhao M, Saripalli Y, Kandaswamy P K, et al. Growth and characterization of DH-HEMT structures with various AlGaN barriers and AlN interlayers on 200mm Si (111) substrates[J]. Phys. Status Solidi (C), 2014, 11(3-4): 446-449.

【10】Wang C, Simoen E, Zhao M, et al. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS capacitors[J]. Semicond. Sci. and Tech., 2017, 32(10): 105002.

【11】Schroter W, Cerva H. Interaction of point defects with dislocations in silicon and germanium: electrical and optical effects[C]// Solid State Phenomena, Trans Tech Publications, 2002, 85(1): 67-144.

【12】Hedemann H, Schroter W. Deep-level transient-spectroscopy for localized states at extended defects in semiconductors[J]. J. de Physique Ⅲ, 1997, 7(7): 1389-1398.

【13】Murphy J D, Wilshaw P R, Pygall B C, et al. Enhanced oxygen diffusion in highly doped p-type Czochralski silicon[J]. J. Appl. Phys., 2006, 100(10): 103531.

【14】Sun S, Sun W, Hao Q, et al. Oxide precipitation behavior in heavily doped silicon wafer after rapid thermal process[J]. Mater. Sci. in Semicond. Processing, 2006, 9(1-3): 78-81.

【15】De Gryse O, Clauws P, Vanhellemont J, et al. Characterization of oxide precipitates in heavily B-doped silicon by infrared spectroscopy[J]. J. of the Electrochemical Society, 2004, 151: G598-G605.

【16】Ono T, Asayama E, Horie H, et al. Effect of heavy boron doping on oxide precipitate growth in Czochralski silicon[J]. J. of the Electrochemical Society, 1999, 146: 2239-2244.

【17】Ono T, Romanowski A, Asayama E, et al. Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon[J]. J. of the Electrochemical Society, 1999, 146: 3461-3465.

引用该论文

WANG Chong,ZHAO Ming,Eddy SIMOEN,LI Wei. Study on Deep-Level Transient Spectroscopy of Ni-Au/AlN/Si MIS Capacitors[J]. Semiconductor Optoelectronics, 2019, 40(4): 494-498

王 冲,赵 明,Eddy SIMOEN,李 伟. Ni-Au/AlN/Si器件的深能级瞬态谱研究[J]. 半导体光电, 2019, 40(4): 494-498

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF