本文对摩擦工艺过程中的线不良进行了分析, 通过切割验证、设计方案变更验证了降低ESD风险的两个方向。通过实际的验证结果分析发现, 减小填充图形的面积或者将填充图形连接到公共电极, 同时搭配填充图形到信号线的距离增加到大于60 μm, 可以大大降低静电放电发生的概率, 不良率由20%降低到0%。结果充分表明, 此设计方案可应用于实际产品设计中以降低摩擦工艺过程中的ESD风险。

In this paper, the line defects in the TFT-LCD rubbing process are analyzed, and the two directions of reducing ESD(Electro Static Discharge) risk are verified by cutting verification and design change. Through the analysis of the actual verification results, it is found that reducing the area of the Dummy pattern or connecting the dummy pattern to Vcom, and improving the distance from the Dummy pattern to the signal line above 60 μm, can greatly reduce the probability of ESD occurrence, and the defect ratio is reduced from 20% to 0%. The results fully demonstrate that this design can be applied to the actual product design to reduce the ESD risk during the rubbing process.