锑化铟作为制备中波红外探测器的主流材料，其光敏芯片规模经历了单元、多元、线列到面阵的发展过程。出于市场应用需求，光敏芯片的制备技术不断更新换代。按发展先后顺序介绍了锑化铟光敏芯片PN结的制备技术，具体包括热扩散技术、离子注入技术和外延技术。目前国内成熟的光敏芯片成结技术为热扩散技术。国外主流厂家在热扩散、离子注入、外延工艺方面都已研发成熟，并投入实际生产。着重介绍了三种工艺技术的优缺点及配套的焦平面阵列结构设计。

InSb is the mainstream material for the fabrication of mid-wave infrared detectors. Its photosensitive chip scale has undergone the development process from cell, multi-element, line array to area array. Due to the demand of market application, the fabrication technology of photosensitive chip is constantly updated. According to the development sequence, the fabrication technology of PN junction of InSb photosensitive chip is introduced, including thermal diffusion technology, ion implantation technology and epitaxy technology. At present, thermal diffusion technology is the mature technology of photosensitive chip formation in China. The main foreign manufacturers have mature technologies in thermal diffusion ion implantation and epitaxy technology and put them into actual production. The advantages and disadvantages of the three technologies and the design of the corresponding focal plane array structure are introduced emphatically.