红外与毫米波学报, 2019, 38 (4): 04459, 网络出版: 2019-10-14  

基于金属-半导体-金属结构的Bi2Te3室温高响应率太赫兹探测器

High responsivity Bi2Te3-based room temperature terahertz detector based on metal-semiconductor-metal structure
作者单位
1 东华大学 理学院 应用物理系,上海 201620
2 中国科学院上海技术物理研究所 红外物理国家重点实验室,上海 200083
3 上海智能电子与系统研究所,上海 201620
4 中国科学院大学,北京 100049
摘要
基于二维拓扑绝缘体Bi2Te3材料利用微纳工艺制备了金属-拓扑绝缘体-金属(MTM)结构的太赫兹光电探测器.器件在0.022 THz的响应率可达2×103 A/W,噪声等效功率(NEP)低于7.5×10-15 W/Hz1/2,探测率D*高于1.62 ×1011 cm·Hz1/2/W;在0.166 THz的响应率可达281.6 A/W,NEP低于5.18×10-14 W/Hz1/2,D*高于2.2×1010 cm·Hz1/2/W;在0.332 THz的响应率可达7.74 A/W,NEP低于1.75×10-12 W/Hz1/2,D*高于6.7 ×108 cm·Hz1/2/W;同时器件在太赫兹波段具有小的时间常数(7~8 μs).该项工作突破了传统光子探测的带间跃迁,实现了可室温工作、高响应率、高速响应以及高灵敏度的太赫兹探测器件.
Abstract
In this study, a metal-topological insulator-metal (MTM) structure terahertz photodetector was fabricated based on a two-dimensional topological insulator Bi2Te3 material using a micro-nano process. The responsivity of device reaches 2×103 A/W at 0.02 THz, the noise equivalent power (NEP) is lower than 7.5×10-15 W/Hz1/2, and the detectivity D* is higher than 1.62×1011 cm·Hz1/2 /W. The responsivity is up to 281.6 A/W at 0.166 THz, NEP is lower than 5.18×10-14 W/Hz1/2, D* is higher than 2.2×1010 cm·Hz1/2/W. The responsivity is up to 7.74 A/W at 0.332 THz, NEP is lower than1.75×10-12 W/Hz1/2, D* is higher than 6.7×108 cm·Hz1/2/W. At the same time, the response time of device is 7~8 μs in the terahertz band. This work breaks through the inter-band transition of traditional photon detection, and realizes terahertz detectors with room temperature operation, high response rate, high speed response and high sensitivity.

徐新月, 张晓东, 吴敬, 江林, 吴彩阳, 姚娘娟, 曲越, 周炜, 尹一鸣, 黄志明. 基于金属-半导体-金属结构的Bi2Te3室温高响应率太赫兹探测器[J]. 红外与毫米波学报, 2019, 38(4): 04459. XU Xin-Yue, ZHANG Xiao-Dong, WU Jing, JIANG Lin, WU Cai-Yang, YAO Niang-juan, QU Yue, ZHOU Wei, YIN Yi-Ming, HUANG Zhi-Ming. High responsivity Bi2Te3-based room temperature terahertz detector based on metal-semiconductor-metal structure[J]. Journal of Infrared and Millimeter Waves, 2019, 38(4): 04459.

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