SnO2基紫外探测器具有较高的光响应度，但由于材料存在持续光电导效应，其响应时间较长，限制了其在光电探测领域的应用。为此，我们研究了表面修饰对SnO2基光电探测器件的性能影响。采用化学气相沉积的方法制备了高结晶质量的SnO2微米线，并在此基础上制备了基于单根SnO2微米线的光电探测器。同时制备了高质量的钙钛矿CH3NH3PbBr3材料，并与SnO2微米线结合制备出经过修饰的SnO2基器件。两种器件在紫外波段都呈现出明显的光响应，响应峰值位于250 nm处。相比单根SnO2微米线器件，经过修饰后的SnO2微米线探测器的响应度提高了10倍，响应时间由单根SnO2微米线器件的几百乃至上千秒缩短为0.9 s。这一研究结果说明我们所采用的方法非常有望应用到高性能SnO2光电探测器的制备中。

UV photodetectors based on SnO2 material usually have high optical responsivity. However, due to the continuous photoconductivity, its response time is usually very long, which limits its application in the field of photodetection. Here we investigated the effect of surface modification on the performance of SnO2-based photodetector. The high crystal quality SnO2 microwires were prepared by chemical vapor deposition and photodetector based on single SnO2 microwires were also fabricated. At the same time, organic perovskite MAPbBr3 with high quality was also prepared using solution method and the devices based on SnO2 decorated with MAPbBr3 were fabricated in the following. Both devices exhibited significant response in the UV region with a peak at 250 nm. Compared to the device made by a single SnO2 microwire, the responsivity of the device decorated by CH3NH3PbBr3 showed as much as ten times higher and the response time reduced from tens or even hundreds of seconds to 0.9 s. The experiment results indicate that the method we used is very promising for the preparation of high performance SnO2 photodetectors.