为了优化PIN光电探测器响应特性, 首先依据载流子速率方程, 并考虑芯片寄生参量和封装寄生参量, 建立光电探测器的等效电路模型。然后仿真分析了反偏电压、I区宽度、光敏面、芯片寄生电阻和电容、封装寄生电阻、电容和电感对光电探测器脉冲响应特性和频率响应特性的影响。结果表明: 通过增大反偏电压, 减小光敏面和寄生参量(芯片寄生电容和电阻, 封装寄生电容和电阻), 选取合适的I区宽度, 利用引线电感的谐振效应现象, 可以抑制脉冲响应波形畸变, 提高频率响应带宽。

In order to optimize the response characteristics of PIN photodetectors to incident light signals, according to the carrier rate equation and considering the parasitic parameters of the chip and the parasitic parameters of the package, the equivalent circuit model of the photodetector was derived. In addition, the effects of reverse bias voltage, I-zone width, photosensitive surface, chip parasitic resistance and capacitance, package parasitic resistance, capacitance and inductance on the pulse response characteristics and frequency response characteristics of photodetectors were simulated. The results show that by increasing the reverse bias voltage, reducing the photosensitive surface and parasitic parameters (chip parasitic capacitance and resistance, package parasitic capacitance and resistance), selecting the appropriate I-zone width, , using the resonance effect of the lead inductance, it can suppress the waveform response to generate waveform distortion as well as improve the frequency response bandwidth.