针对目前高效、稳定的p型掺杂一直较难实现的问题，本文采用化学气相沉积方法制备出了高结晶质量的p型半导体材料Se微米线。同时，还制备出了基于单根Se微米线的光电探测器，其在紫外和可见光波段有较宽的响应范围，响应截止边为675 nm。该器件在5 V偏压下的峰值响应度可达28 mA/W(600 nm)。在此基础上，利用p型Se微米线与钙钛矿材料CH3NH3PbCl3制备了p-n结型器件，与单根Se微米线光电探测器相比，响应时间和响应度都有明显提升，尤其是异质结的响应度比纯Se微米线提高了850%。这一研究结果说明本文制备的有机无机复合结构p-n结非常有望应用到高性能光电探测器中。

Efficient and stable p-type doping is difficult to achieve. To solve this problem, high-quality p-type Se microwires were fabricated using chemical vapor deposition. A photodetector based on a single Se microtube shows broadband photoresponses with a peak responsivity of 28 mA/W at 600 nm under 5 V bias. The cutoff wavelength is estimated to be 675 nm. A p-n heterojunction photodetector using a p-type Se microwire and n-type CH3NH3PbCl3 was also fabricated. Compared to the single Se microtube, the p-n heterojunction photodetector shows obvious reduction in response time and 850% improvement in responsivity. The experimental results indicate that p-n junctions have promising applications in high-performance photodetectors.