三个具有不同量子阱宽度的GaAs/AlAs多量子阱结构样品通过分子束外延生长设备生长在半绝缘的(100)p-型GaAs衬底上, 并且在量子阱层结构的生长过程中, 在GaAs阱层中央进行了Be受主的δ-掺杂。基于这3个结构样品, 通过光刻技术和半导体加工工艺制备了相应的两端器件。在4~200 K的温度范围内, 我们分别测量了器件的电流-电压特征曲线, 清楚地观察到了重、轻空穴通过δ-掺杂Be受主GaAs/AlAs多量子阱结构的共振隧穿现象。发现随着GaAs量子阱层宽的逐渐减小, 轻空穴的共振隧穿峰向着高电压方向移动, 这个结果和通过AlAs/GaAs/AlAs双势垒结构模型计算的结果是一致的。然而, 随着测量温度的进一步升高, 两个轻空穴共振峰都朝着低电压的方向移动, 并且在150 K温度下, 其中一个共振遂穿峰表现为一种振动模式。

Three samples of GaAs/AlAs multiple quantum wells with different quantum-well widths are grown on semi-insulating (100) p-type GaAs substrates by the molecular beam epitaxy with Be acceptors δ-doped at the center of GaAs well layers. Three corresponding two-terminal devices are fabricated by photolithographic and semiconductor manufacturing technologies based on these samples. The device current-voltage characteristics are measured at temperatures in a range of 4-200 K. The resonant tunneling of heavy- and light-holes through Be δ-doped GaAs/AlAs multiple quantum wells are clearly observed. It is found that the position of resonant tunneling for light-heavy holes shifts to higher voltage with decreasing quantum-well sizes, which is in good agreement with the results calculated by the AlAs/GaAs/AlAs double-barrier theoretical model. However, as the measured temperatures increase, two peaks of resonant tunneling of light-holes move toward lower voltage, while one of the resonant peaks behaves as an oscillating mode at 150 K.