红外, 2019, 40 (8): 15, 网络出版: 2019-12-05
分子束外延硅基碲镉汞材料技术研究现状
Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy
摘要
目前，高性能大面阵中波及短波红外探测器已经得到了越来越多的应用。材料参数控制精确、材料质量良好的碲镉汞材料是获得高质量碲镉汞探测器的先决条件。报道了华北光电技术研究所在分子束外延(Molecular Beam Epitaxy, MBE)生长硅基中波及短波碲镉汞材料方面的最新研究进展，并介绍了现阶段MBE生长碲镉汞材料的研究现状。
Abstract
At present, high-performance mid-wave and short-wave infrared detectors with large array size have been used more and more widely. Mercury cadmium telluride(HgCdTe)material with precise control of material parameters and good material quality is a prerequisite for obtaining high-quality HgCdTe detectors. The latest research progress of silicon-based mid-wave and short-wave infrared HgCdTe materials grown by molecular beam epitaxy(MBE) in North China Research Institute of Electro-Optics is reported, and the current research status of MBE-grown HgCdTe materials is introduced.
高达, 王经纬, 王丛, 李震, 吴亮亮, 刘铭. 分子束外延硅基碲镉汞材料技术研究现状[J]. 红外, 2019, 40(8): 15. GAO Da, WANG Jing-wei, WANG Cong, LI Zhen, WU Liang-liang, LIU Ming. Research Status of Si-based HgCdTe Material Technology Grown by Molecular Beam Epitaxy[J]. INFRARED, 2019, 40(8): 15.
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