本文设计了一种磷光顶发射结构制备单色高亮绿光 OLED微型显示器件, 器件结构为: ITO/ 2-TNATA/NPB/MCP: Ir(ppy)3/Bphen/LiF/Mg:Ag。为获得低功耗、高亮度的绿光 OLED微型显示器件, 采用开口率大、益于集成的顶发射结构器件, 并对发光层掺杂机制进行实验研究, 通过改变掺杂比例获得较佳的器件性能。研究表明, 在掺杂比分别为 1.0%、1.5%、1.8%、2.0%、2.3%、2.5%的绿光 OLED器件中, 2.0%的掺杂器件较其他比例的性能更优, 通过进一步优化掺杂研究显示, 发光层主体材料 MCP与掺杂料 Ir(ppy)3的最佳掺杂比例为 1:0.02, 主体材料薄膜厚度为 250 .。在 20 mA/cm2的电流密度下, 得到器件电压为 3.62 V, 亮度为 4622 cd/cm2, 色坐标 (X,Y)为(0.33,0.61)。

A monochrome high brightness green top emission OLED micro-displays is designed by the phosphor emitting structure: ITO/2-TNATA/NPB/MCP:Ir(ppy)3/Bphen/LiF/Mg:Ag. The top emitting structure device with large aperture ratio and easy to integrate was prepared, exhibiting performance of low-power and high brightness. The best performance is obtained by changing the doping ratio in the luminous layer. The results showed that the 2.0% of the doped ratio is better than other ratios such as 1.0%, 1.5%, 1.8%, 2.3%, 2.5% in the green OLED micro-displays. Doped ratio is further optimized, and the best rate of the host materials MCP and doped material Ir(ppy)3 is 1:0.02, the film thickness of host material is 250 .. When current density is 20 mA/ cm2, voltage is 3.62 V, the brightness is 4622 cd/cm2, chromaticity coordinates (CIE X, Y) (0.33, 0.61).