硅基微环腔的结构参数、半导体特性和工艺形貌会对相关光子对输出重复频率产生重要影响。将晶体硅非线性损耗计入输出重复频率的仿真计算,推导出全通型硅基微环腔自发四波混频效应模型,并利用该模型研究了全通型硅基微环腔品质因数、微环腔半径、晶体硅自由载流子寿命等参数对输出重复频率的影响。结果表明,当外品质因数取值5×104, 抽运功率达到15 mW且继续升高时,输出重复频率反而降低;理想情况下微环腔半径越小,输出重复频率越高;对硅基微环腔相关光子对光源而言,提高输出重复频率的首选方案是降低自由载流子寿命。

The structure parameters, semiconductor characteristics and process morphology of silicon micro-ring resonators have important effects on the output repetition frequency of correlated photon-pair sources. The nonlinear loss of crystalline silicon is included in the simulation calculation of the output repetition frequency, and the spontaneous four-wave mixing effect model of all-pass silicon micro-ring resonators is deduced. Effects of the parameters such as the quality factor of all-pass silicon micro-ring resonators, radius of micro-ring resonators and free carrier life of crystalline silicon on output repetition frequency are investigated by using the model. Results show that when the external quality factor is 5×104, the pumping power reaches 15 mW and continues to increase, the output repetition frequency of the correlated photon-pairs decreases. Ideally, the smaller the radius of the micro-ring resonators is, the higher the output repetition frequency will be. For the silicon micro-ring resonators correlated photon-pair sources, the preferred solution to increase the output repetition frequency is to reduce the free carrier lifetime.