用射频磁控溅射法在Pt/Ti/SiO2/Si(100)基片上沉积了LiTaO3薄膜, 并在氧气气氛中不同温度下进行退火。采用SEM、XRD、XPS等表征方法分析了薄膜的结晶性能、各元素化学价态和元素原子百分比。结果表明, 经700℃退火处理1h得到的薄膜结晶性能最好, 在(104)晶向上具有强烈的择优取向性。薄膜退火温度的升高导致薄膜中Li空位缺陷和O空位缺陷减少。研究表明, 薄膜中O/Li的原子比对结晶性能有着非常明显的影响, 原子值越接近晶体化学计量比, 结晶性能越好。

LiTaO3 thin films were deposited on Pt/Ti/SiO2/Si (100) substrates by radio frequency magnetron sputtering method. The crystallization behavior, chemical valence states and atomic percentage of elements were analyzed by SEM, XRD and XPS. The results show that the films annealed at 700℃ for 1hour have the best crystallinity and strong preferred orientation in (104) direction. The increase of annealing temperature causes the decrease of Li and O vacancies in the films. The results show that the atomic ratio of O/Li has a very significant effect on the crystallinity of the LiTaO3 films. This ratio value is closer to the stoichiometric ratio of lithium tantalate crystal, the crystallization performance is better.