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0.2 THz二倍频器研究

Research of 0.2 THz doubler multiplier

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摘要

基于六阳极结反向串联型GaAs平面肖特基二极管, 设计并实现了0.2 THz大功率二倍频器。肖特基二极管倒装焊接在50 μm石英电路上。采用电磁场和电路联合设计仿真获得了二倍频器的倍频效率。当入射功率在100 mW时, 输出频率在190~225 GHz带内效率大于5%。在小功率(Pin≈100 mW)和大功率(Pin≈300 mW)注入条件下, 测试了倍频电路的输出功率和倍频效率。在100 mW驱动功率下采用自偏压测试, 最大输出功率为14.5 mW@193 GHz, 对应倍频效率为14%; 在300 mW驱动功率下采用自偏压测试, 在188~195 GHz, 输出功率大于10 mW, 最大输出功率为35 mW@192.8 GHz, 对应倍频效率为11%。

Abstract

A 0.2 THz high power doubler multiplier was designed and realized based on six anodes in parallel-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 50 μm thick quartz. The efficiency of the circuit was simulated combined of EM simulator and circuit simulator. The measured efficiency was bigger than 5% over the band of 190 GHz to 225 GHz with the input power of 100 mW. The circuit output power and efficiency were measured under the condition of small and large input power as 100 mW and 300 mW. The peak efficiency was 14% at the frequency of 193 GHz and the maximum output power was 14.5 mW with the input power of 100 mW under the self-biased condition. The measured output power was bigger than 10 mW over the band of 188 GHz to 195 GHz with the input power of 300 mW under the self-biased condition. The peak output power was 35 mW at the frequency of 192.8 GHz and the multiplier efficiency was 11%.

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中图分类号:TN45

DOI:10.3788/irla201948.1219002

收稿日期:2019-08-11

修改稿日期:2019-09-21

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作者单位    点击查看

谢文青:北京星英联微波科技有限责任公司, 北京 100084
胡 南:北京星英联微波科技有限责任公司, 北京 100084
刘建睿:成都英联科技有限责任公司, 四川 成都 610041
赵丽新:成都英联科技有限责任公司, 四川 成都 610041
曾庆生:南京航空航天大学 航天学院, 江苏 南京 210016
罗彦彬:南京航空航天大学 航天学院, 江苏 南京 210016
周 平:南京航空航天大学 航天学院, 江苏 南京 210016
刘 爽:北京星英联微波科技有限责任公司, 北京 100084
袁昌勇:成都英联科技有限责任公司, 四川 成都 610041

联系人作者:谢文青(sa06@ainfoinc.com)

备注:谢文青(1979-), 男, 高级工程师, 硕士, 主要从事天线和波导设计及射频电路方面的研究。

【1】Goutam Chattopadhyay. Technology, capabilities, and performance of low power terahertz sources [J]. IEEE Transactions on Terahertz Science and Technology, 2011, 1(1): 33-52.

【2】Wu Bin, Liu Zhiming, Wang Hengfei, et al. Terahertz generation and transmission in CaAs waveguide structure [J]. Infrared and Laser Engineering, 2014, 43(12): 3903-3906. (in Chinese)

【3】Wang Junlong, Yang Dabao, Xing Dong, et al. Research of 0.2 THz unbalanced multiplier circuit [J]. Infrared and Laser Engineering, 2017, 46(1): 0106003. (in Chinese)

【4】Jiang Jun, Zhang Jian, Deng Xianjin, et al. 340 GHz frequency multiplier without matching circuit based on Schottky diodes [J]. Infrared and Laser Engineering, 2014, 43(12): 4028-4034. (in Chinese)

【5】Zhang Yuping, Lv Huanhuan, Li Tongtong, et al. Reflection modulation properties at two frequencies of dual-control graphene metamaterial terahertz modulator [J]. Journal of Shandong University of Science and Technology(Natural Science), 2016, 35(6): 68-75. (in Chinese)

【6】Alain Maestrini, John S W, John J G, et al. A 540-640-GHz high-efficiency four-anode frequency tripler [J]. IEEE Transactions on Microwave Theory and Techniques, 2005, 53(9): 2835-2843.

【7】David W P. High-efficiency terahertz frequency tripler[C]//IEEE MTT-S Int. Microwave Symp, 2007: 337-340.

【8】Yao Changfei, Zhou Ming, Luo Yunsheng, et al. A 5.4 mW and 6.1% efficiency fixed-tuned 214 GHz frequency doubler with Schottky barrier diodes[J]. High Technology Letters, 2015, 21(11): 85-89.

引用该论文

Xie Wenqing,Hu Nan,Liu Jianrui,Zhao Lixin,Zeng Qingsheng,Luo Yanbin,Zhou Ping,Liu Shuang,Yuan Changyong. Research of 0.2 THz doubler multiplier[J]. Infrared and Laser Engineering, 2019, 48(12): 1219002

谢文青,胡 南,刘建睿,赵丽新,曾庆生,罗彦彬,周 平,刘 爽,袁昌勇. 0.2 THz二倍频器研究[J]. 红外与激光工程, 2019, 48(12): 1219002

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