随着射频/微波器件的快速发展及其应用领域的日益扩大，基于半导体单片集成技术的多种器件集成工艺不断发展。研究了一种采用AlGaAs--InGaAs的砷化镓化合物衬底。琥珀酸湿法蚀刻工艺对器件电性能影响较小。将耗尽型和增强型赝配高电子迁移率晶体管(pseudomorphic High--Electron--Mobility Transistor, pHEMT)器件集成于同一芯片半导体工艺技术。结果表明，增强型晶体管Y型栅极的线宽为0.25 m，开启电压为0.3 V；耗尽型晶体管栅极的线宽为0.5 m，开启电压为-0.8 V，实现了在同一芯片上集成从负到正的栅极电压分布，为设计者提供了更为宽广的设计平台。这种集成技术可以应用于低噪声放大器、线性天线开关、滤波器以及功率控制装置等领域。

With the rapid development and increasingly expanding application fields of RF/microwave devices, various device integration processes based on semiconductor monolithic integration technology have been developing. A GaAs compound substrate with AlGaAs-InGaAs is studied. The succinic acid wet etching process has less influence on the electrical performance of the device. The depleted and enhanced pseudomorphic high-electron-mobility transistor (pHEMT) devices are integrated into the same chip semiconductor process technology. The results show that the Y-gate of enhanced transistor has a linewidth of 0.25 m and an opening voltage of 0.3 V; the gate of depleted transistor has a linewidth of 0.5 m and an opening voltage of -0.8 V. The gate voltage distribution from negative to positive on the same chip is realized, and a broader design platform for designers is provided. This integration technology can be applied to fields such as low noise amplifiers, linear antenna switches, filters, and power control devices.