为了分析并精确预测半导体光放大器的性能，对InP-InGaAsP均匀掩埋的半导体光放大器建立了一种有效的数学模型，考虑了自发辐射与受激辐射之间的关系，实时模拟分析了偏置电流、输入功率对增益和噪声指数的影响。结果表明，在偏置电流为120mA、输入功率为-10dBm时，半导体光放大器的性能最佳。该模型能够对半导体光放大器的设计提供一定的借鉴。

In order to analyze and accurately predict the performance of semiconductor optical amplifiers, an effective mathematical model of InP-InGaAsP uniformly buried semiconductor optical amplifier was established. Considering the relationship between spontaneous and stimulated radiation, the effects of bias current and input power on gain and noise index were analyzed by real-time simulation. The results show that, when the bias current is 120mA and the input power is -10dBm, semiconductor optical amplifier has the best performance. The model can provide some reference for the design of semiconductor optical amplifier.