介绍一种基于国产氮化镓(GaN)外延材料的X波段300 W GaN高效率内匹配器件技术。该技术采用大栅宽芯片的大信号有源模型和封装管壳、键合引线、电容等无源模型, 开展X波段300 W内匹配功率器件的设计。采用四胞匹配合成电路, 使用L-C网络提升器件阻抗, 通过λ/4阻抗变换网络进行阻抗变换和功率合成, 实现阻抗50 Ω匹配, 功率分配器和匹配电容使用高Q值陶瓷基片实现。仿真实验证明, 该器件在9.5~10.5 GHz频率内输出功率大于300 W, 功率增益大于9 dB, 功率附加效率大于38.9%。同时研究了器件输出功率和功率附加效率随工作电压、脉冲宽度、占空比变化情况。

An X-band 300 W inter-matching GaN High Electron Mobility Transistor(HEMT) with high efficiency based on domestic GaN epitaxial material is studied. The design of matched power devices in 300 W X-band is carried out by using the large signal model of large gate width chip, package shell model, bonding wire model, capacitance model and so on. Four-cell matched synthesis circuit is adopted, L-C network is utilized to improve the impedance of the device, and then impedance transformation and power synthesis are carried out throughλ/4 impedance transformation network to achieve impedance matching of 50 Ω. The power splitter and matching capacitance are realized by using high Q ceramic substrates. The internal matching device is developed with output power over 300 W, the gain above 9 dB and Power Adder Efficiency(PAE) greater than 38.9% in frequency from 9.5 to 10.5 GHz. At the same time, the variation of output power and PAE with operating voltage, pulse width and duty cycle is also studied.