当金属-分布式Bragg反射镜-金属（M1-DBR-M2）结构中的DBR周期数比较大时, M1-DBR-M2中的两光学Tamm态（OTS）发生弱耦合。 通过研究M1-DBR-M2结构中OTS弱耦合情况下的反射光谱和OTS本征波长电场分布, 揭示了弱耦合情况下的OTS和光隧穿效应。 研究结果表明： 在弱耦合情况下, 金属薄膜M1的厚度影响了OTS的本征波长, 而金属薄膜M2的厚度对OTS的本征波长没影响。 虽然弱耦合情况下只能激发M1-DBR交界面处的OTS1, 但电场局域现象并不是仅仅发生在M1-DBR交界面处, 光可以穿过DBR到达并被局域在DBR-M2交界面处, 存在光的隧穿效应。 光隧穿效应的强弱与两OTS的本征波长失谐量大小有关, 本征波长失谐量越小, 光隧穿效应越强。 两OTS的本征波长失谐量的大小, 也影响了光在M1-DBR-M2结构中局域的强弱, 本征波长失谐量越小, 光的局域现象越强, 反射光谱中凹峰处的反射率越小。

Weak couplingeffect between two optical Tamm states (OTS) in metal-DBR-metal (M1-DBR-M2) structure will occur when the periodicity of distributed Bragg (DBR) in theM1-DBR-M2 is relatively large. By studying the reflection spectrum and the distribution of the electric field of the intrinsic wavelength of OTS under the condition of weak coupling of OTS, the intrinsic wavelength, reflectivity and optical tunneling effect of OTS are revealed. The results show that the intrinsic wavelength of OTS is affected by the thickness of the metal film M1 under the weak coupling condition, while the thickness of the metal film M2 has no effect on the intrinsic wavelength of OTS. Although only the OTS1 at the M1-DBR interface can be excited, the local field phenomenon is not only localized at the M1-DBR interface. The light can go through the DBR and be localized to the DBR-M2 interface, which is optical tunneling effect. The optical tunneling effect is related to the intrinsic wavelength detuning between two OTS. The smaller the detuning of the intrinsic wavelength is, the stronger the tunneling effect is. The intrinsic wavelength detuning between two OTS also affects the local intensity of light in the M1-DBR-M2 structure. The smaller the detuning of the intrinsic wavelength is, the stronger the local phenomenon of light is, and the smaller the reflectivity at the concave peak in the reflection spectrum is.