光电子技术, 2019, 39 (3): 178, 网络出版: 2020-05-12
低温制备的双层栅介质铟镓锌氧薄膜晶体管
IGZO TFTs with Double-layer Gate Dielectric Fabricated at Low Temperature
摘要
在低温下制备了三氧化二铝/二氧化硅双层栅介质铟镓锌氧薄膜晶体管。原子力显微镜图显示双层栅介质薄膜具有良好的均一性。经过200 ℃真空退火处理, 双层栅介质铟镓锌氧薄膜晶体管表现出良好的转移特性和输出特性, 器件的亚阈值摆幅SS为177 mV/dec, 电流开关比为1.9×108。低温下制备的双层栅介质铟镓锌氧薄膜晶体管有希望应用于柔性电子。
Abstract
Al2O3/SiO2 double-layer gate dielectric thin film transistors(TFTs) are fabricated at low temperature. AFM image shows excellent uniformity of double-layer gate dielectric. The device annealed in vacuum at 200 ℃ exhibits excellent electrical characteristics with small SS of 177 mV/decade and high Ion/Ioff of 1.9×108. Double-layer gate dielectric IGZO TFT fabricated at low temperature is very promising for flexible electronic applications.
李慧津, 董俊辰, 郁文, 韩德栋, 张盛东, 张兴, 王漪. 低温制备的双层栅介质铟镓锌氧薄膜晶体管[J]. 光电子技术, 2019, 39(3): 178. LI Huijin, DONG Junchen, YU Wen, HAN Dedong, ZHANG Shengdong, ZHANG Xing, WANG Yi. IGZO TFTs with Double-layer Gate Dielectric Fabricated at Low Temperature[J]. Optoelectronic Technology, 2019, 39(3): 178.
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