太赫兹科学与电子信息学报, 2020, 18 (2): 345, 网络出版: 2020-05-28
一种结构简单的高精确度带隙基准源设计
Design of a simple structure bandgap reference with high precision
带隙基准源 互补金属氧化物半导体 温度系数 电源抑制比 bandgap reference Complementary Metal Oxide Semiconductor(CMOS) temperature coefficient voltage suppression ratio
摘要
设计了一款快速启动、高稳定性的实用型带隙基准电压源。基准源电路基于110?nm的CMOS标准工艺实现，使用Cadence软件进行仿真。仿真表明，在室温下，电源电压为3.3 V时，输出基准电压为1.2?V； 在-40?℃~85?℃范围内温度漂移系数为33?ppm/℃；电路启动时间为0.5?μs；电源电压抑制比在低频时达到-61?dB；功耗为0.967?mW；版图面积为50?μm×180?μm。该电路结构简单，易于集成，可应用于高速、高精 确度的数模转换器(DAC)。
Abstract
A practical bandgap reference voltage source is designed with quick start and high stability. It selects 110?nm CMOS(Complementary Metal Oxide Semiconductor) device technology and simulation software of Cadence. The simulation results indicate that under room temperature, the output voltage is 1.2 V under 3.3 V power supply; the temperature drift coefficient is 33 ppm/℃ between -40?℃-85 ℃; it takes 0.5?μs to start the circuit; and the power consumption is 0.967?mW; Power Supply Rejection Ratio(PSRR) reaches -61?dB in the range of low frequency; the layout covers an area of 50?μm×180?μm. Because its simple structure and being easy to be integrated, the circuit can be applied to DAC(Digital to Analog Converter) with high speed and high precision.
张泽伟, 宋树祥, 蒋品群, 庞中秋. 一种结构简单的高精确度带隙基准源设计[J]. 太赫兹科学与电子信息学报, 2020, 18(2): 345. ZHANG Zewei, SONG Shuxiang, JIANG Pinqun, PANG Zhongqiu. Design of a simple structure bandgap reference with high precision[J]. Journal of terahertz science and electronic information technology, 2020, 18(2): 345.
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