利用金属有机物化学气相沉积(MOCVD)技术, 在蓝宝石衬底上进行了BGaN薄膜的外延生长, 研究了生长厚度、温度、压力和B/Ⅲ比等条件对BGaN薄膜中B组分的影响。X射线衍射测试结果表明, 降低生长温度、压力以及增加B/Ⅲ比, 更有利于提高BGaN薄膜中B的并入效率。在800 ℃、30 kPa及B/Ⅲ比为30 %的生长条件下, 制备的BGaN薄膜中B组分最高, 为6.1%。

In this work, we used metal organic chemical vapor deposition (MOCVD) technology to carry out epitaxial growth of BGaN films on sapphire substrates. We studied the influence of growth thickness, temperature, pressure and B/Ⅲ ratio on the boron content of the BGaN films. X-ray diffraction measurement results demonstrate that lowering the growth temperature, pressure and increasing the B/Ⅲ ratio are conductive to improving the incorporation efficiency of B in BGaN films. At the growth conditions of 800 ℃, 30 kPa and B/Ⅲ ratio of 30%, the B content of the BGaN film is up to the highest with 6.1%.