GeTe基半导体的非晶态，.-GeTe相和.-GeTe相可以相互转换，且在一定条件下稳定存在。利用高浓度空穴掺杂改善 GeTe热电和铁电性能，以及非晶相和晶相间的巨大差异和快速切换，使其在热电、自旋器件、相变开关、相变存储等多个领域具有很大的应用前景。此外， GeTe具有窄光学带隙和高载流子迁移率，有望用于高性能红外光电探测，然而其在红外光电探测方面还处于初始阶段。本综述在详述其性质及在热电、相变等领域应用情况的基础上，根据 GeTe的光电性质，展望了其在红外光电探测领域方面的应用。

The amorphous, .-GeTe, and .-GeTe phases of GeTe can be stably converted to each other under certain conditions. Because doping-based high-concentration holes can improve the thermoelectric and ferroelectric performances of GeTe, and it can be converted quickly between its amorphous and crystalline phases, GeTe has been applied to thermoelectric devices, spintronic devices, phase change switches, phase change memory, and others. Moreover, GeTe has a narrow optical band gap and high carrier mobility, which is expected to contribute positively to the development of high-performance infrared detectors. However, its application in the infrared detector field is still new. In this paper, its physical characteristics and its applications in areas including the thermoelectric, spintronic, and phase transition fields are reported. Based on its photoelectric properties, its application in the infrared detector field is expected.