International Journal of Extreme Manufacturing, 2020, 2 (1): 012005, Published Online: Jun. 4, 2020  

The recent development of soft x-ray interference lithography in SSRF

Author Affiliations
1 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, CAS, Shanghai, People’s Republic of China
2 Shanghai Institute of Applied Physical, CAS, Shanghai, People’s Republic of China
Abstract
This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.

Jun Zhao, Shumin Yang, Chaofan Xue, Liansheng Wang, Zhaofeng Liang, Lei Zhang, Yong Wang, Yanqing Wu, Renzhong Tai. The recent development of soft x-ray interference lithography in SSRF[J]. International Journal of Extreme Manufacturing, 2020, 2(1): 012005.

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