红外与激光工程, 2020, 49 (1): 0103002, 网络出版: 2020-06-08   

Sb2Te3量子点的制备、结构及红外性质研究

Research on the preparation, structure and infrared properties of Sb2Te3 quantum dots
梁晶 1,2,3周亮亮 1,2,3李斌 1,2,3李学铭 1唐利斌 2,3
作者单位
1 云南师范大学 太阳能研究所 可再生能源材料先进技术与制备教育部重点实验室, 云南 昆明 650500
2 昆明物理研究所, 云南 昆明 650223
3 云南省先进光电材料与器件重点实验室, 云南 昆明 650223
摘要
碲化锑(Sb2Te3)是一种新型二维层状材料, 采用“自上而下”的超声剥离法, 以碲化锑粉末为原料, 以N-甲基吡咯烷酮(NMP)为分散剂, 首次成功制备出碲化锑量子点(Sb2Te3 QDs), 并采用多种手段(SEM, TEM, AFM, XPS, XRD等)对所制备Sb2Te3 QDs的形貌和结构进行了表征, 同时还采用UV-Vis、PL及PLE探究了Sb2Te3 QDs的光学性质。研究表明: 所制备的Sb2Te3 QDs平均粒径为2.3 nm, 平均高度为1.9 nm, 颗粒大小均匀、具有良好的分散性, PL与PLE峰位有明显的红移现象, 研究还发现Sb2Te3 QDs在红外波段有明显的吸收与光致发光。研究表明: 超声剥离法制备Sb2Te3 QDs是切实可行的, 该量子点的PL与PLE对波长具有依赖性, 其在红外波段的特性表明: 它有望成为一种新型的红外探测材料。
Abstract
Antimony telluride (Sb2Te3) is a new type of two-dimensional layered material, in this paper, the "top-down" ultrasonic exfoliation method was used to prepare antimony telluride quantum dots (Sb2Te3 QDs) for the first time, with antimony telluride powder as raw material, and N-methyl pyrrolidone (NMP) as the dispersant. A variety of characterizations(SEM, TEM, AFM, XPS, XRD, etc.) for the structure and morphology of the prepared Sb2Te3 QDs were performed. The optical properties of Sb2Te3 QDs were studied using UV-Vis, PL and PLE. It is found that the average particle size of the prepared Sb2Te3 QDs is 2.3 nm, and the average height is 1.9 nm, with a good dispersive particle size uniformity, the PL and PLE peaks have a redshift, both PL and PLE are dependent on the excitation wavelength and emission wavelength. It is also found that Sb2Te3 QDs has obvious absorption and photoluminescence in the infrared band. The results indicate that the ultrasonic exfoliation method is feasible to prepare Sb2Te3 QDs, the characteristics of the material show the potential application in infrared detector.

梁晶, 周亮亮, 李斌, 李学铭, 唐利斌. Sb2Te3量子点的制备、结构及红外性质研究[J]. 红外与激光工程, 2020, 49(1): 0103002. Liang Jing, Zhou Liangliang, Li Bin, Li Xueming, Tang Libin. Research on the preparation, structure and infrared properties of Sb2Te3 quantum dots[J]. Infrared and Laser Engineering, 2020, 49(1): 0103002.

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