红外与激光工程, 2020, 49 (1): 0103007, 网络出版: 2020-06-08   

320×256 InAs/GaSb超晶格中/短波双色探测器组件研制

320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice
吕衍秋 1,2,3,*彭震宇 1,2,3曹先存 1,2,3何英杰 1,3李墨 1,2,3孟超 1,2,3朱旭波 1,2,3
作者单位
1 中国空空导弹研究院, 河南 洛阳 471099
2 红外探测器技术航空科技重点实验室, 河南 洛阳 471099
3 河南省锑化物红外探测器工程技术研究中心, 河南 洛阳 471099
摘要
InAs/GaSb超晶格材料制备的新型红外器件在最近十几年得到了迅速发展。文中开展了InAs/GaSb二类超晶格中/短波双色焦平面探测器组件研制, 设计了中/短波双色叠层背靠背二极管芯片结构, 用分子束外延技术生长出结构完整、表面平整、低缺陷密度的PNP结构超晶格材料, 制备出性能优良的320×256双色焦平面探测器组件, 对探测器组件进行了测试分析。结果显示, 在77 K下中波二极管RA值达到26.0 kΩ·cm2, 短波的RA值为562 kΩ·cm2。光谱响应特性表明短波响应波段为1.7~3 μm, 中波为3~5 μm, 满足设计要求。双色峰值探测率达到中波3.12×1011 cm·Hz1/2W-1, 短波1.34×1011 cm·Hz1/2W-1。响应非均匀性中波为9.9%, 短波为9.7%。中波有效像元率为98.46%, 短波为98.06%。
Abstract
New infrared devices prepared by InAs/GaSb superlattice materials have developed rapidly in the last decade. The paper carries out practical researches on mid-/short-wavelength dual-color infrared detector based on type-II InAs/GaSb superlattice. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy. Finally, 320×256 focal plane arrays with excellent performance was fabricated and measured. The RA value of middle-wave channel reached 26 kΩ·cm2 and the short-wave channel reached 562 kΩ·cm2 at 77 K. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibits a detectivity value of 3.12×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibits a detectivity value of 1.34×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.

吕衍秋, 彭震宇, 曹先存, 何英杰, 李墨, 孟超, 朱旭波. 320×256 InAs/GaSb超晶格中/短波双色探测器组件研制[J]. 红外与激光工程, 2020, 49(1): 0103007. Lv Yanqiu, Peng Zhenyu, Cao Xiancun, He Yingjie, Li Mo, Meng Chao, Zhu Xubo. 320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice[J]. Infrared and Laser Engineering, 2020, 49(1): 0103007.

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