提出了采用环境友好型InP/ZnS核壳结构量子点材料制备匹配蓝光Micro-LED阵列的量子点色转换层以实现Micro-LED阵列器件全彩化的技术方案。通过采用倒置式量子点色转换层方案, 实现了InP/ZnS量子点材料和Micro-LED阵列的非直接接触, 从而可以缓解LED中热量聚集导致的量子点材料发光主波长偏移、半峰宽展宽以及发光效率衰减等问题。量子点色转换层中内嵌PDMS聚合物柔性膜层, 可以消除咖啡环效应, 同时, 色转换层中内嵌飞秒激光图案化处理的500 nm长波通滤光膜层, 可以抑制蓝光从非蓝色像素单元出射。最后, 实验制备了像素单元中心间距90 μm的16×16 InP/ZnS量子点色转换层。该设计可以实现基于蓝光Micro-LED阵列的全彩色Micro-LED显示器件的制备, 并且该制备方法可以降低全彩色Micro-LED阵列显示器件的制备成本。

In this paper, we propose a technical route to prepare full-color display device based on blue Micro-LED array and environmental friendly InP/ZnS quantum dots. We design the new structure of full-color Micro-LED display device. We design and prepare InP/ZnS quantum dots color conversion layer which matches the blue Micro-LED array. In our new structure of full-color Micro-LED device, InP/ZnS quantum dots color conversion layer is inverted and has no direct touch with the blue Micro-LED array which can relieve the adverse effect on the PL characteristic of InP/ZnS quantum dots material. In order to prepare quantum dots layer with uniform film and uniform luminescence, flexible PDMS polymer layer is embedded into the substrate of the color conversion layer to eliminate coffee-ring effect. At the same time, the patterned 500 nm longwave filter film embedded into the substrate of the color conversion layer can suppress blue light emission which can improve the color purity of the InP/ZnS quantum dot pixel luminescence unit. Finally, a 16×16 InP/ZnS quantum dots color conversion layer with a pixel pitch of 90 μm was prepared experimentally. Based on the design and preparation method, the full-color Micro-LED device can be prepared with lower cost and higher efficiency.