硼是金刚石中最常见的受主元素之一, 其在价带之上0.37 eV处形成了浅能级, 因此硼掺杂金刚石被认为是一种理想的p型半导体材料。在化学气相沉积 法制备的硼掺杂金刚石中, 硼杂质在晶体中的分布非常不均匀, 其拉曼信号强度对测试位置的依赖性非常强, 且可重复性很差。而对于高温高压法合成的硼掺 杂金刚石来说, 同一晶面上硼杂质分布变化较小。本文利用低温光致发光光谱研究了高温高压法合成的硼掺杂金刚石辐照缺陷的光致发光性质, 并利用晶体生 长理论讨论了辐照缺陷在不同晶面上的分布情况。

Boron is one of the most common acceptor elements in diamond that forms a shallow level at 0.37 eV above the valence band, and thus boron-doped diamond is considered to be an ideal p-type semiconductor material. For the chemical vapor deposition synthetic boron doped diamond, the distribution of boron impurities in the crystal is very inhomogeneous, and the Raman intensity is so dependent on the test position that the repeatability is poor. However, the boron content in the same growth sector of high temperature and high-pressure synthesized diamond changes slightly. In this paper, the photoluminescence properties of irradiated defects in high temperature and high pressure synthesized boron-doped diamond were investigated by low temperature photoluminescence spectroscopy, and the growth sector dependence of irradiated defects was interpreted by the theory of crystal growth.