基于石墨烯低压化学气相沉积技术, 通过调控甲烷流量对比研究了传统生长腔和气相捕获腔中石墨烯在铜箔衬底上的形核生长特点。结果表明, 与传统 生长腔相比, 气相捕获腔能够将石墨烯的形核密度降低3个数量级, 并促使石墨烯晶核快速长大。同时, 气相捕获腔能够为石墨烯提供一个稳定的生长环境, 有利于制备晶格完美的石墨烯晶畴, 并为石墨烯晶畴的融合提供更多的有效活性碳原子, 加速石墨烯晶畴之间的融合, 提高石墨烯薄膜的质量。在此基础上分 析了气相捕获腔对石墨烯低压化学气相沉积形核生长的影响机理。

In this paper, the nucleation and growth characteristics of graphene fabricated on copper foils by low pressure chemical vapor deposition in both conventional growth chamber and vapor trapping chamber were comparatively studied via adjusting the flow rate of CH4. The results indicate that the nucleation density of graphene in the vapor trapping chamber decreases three orders of magnitude than that in the conventional growth chamber and graphene nucleus could grow up rapidly. Meanwhile, the vapor trapping chamber was in favor of the fabrication of perfect graphene domains by providing a stable growth environment. By supplying adequate effective activated carbon atoms, the rate of jointing process of graphene domains in the vapor trapping chamber could be accelerated, bettering the quality of graphene film. On the basis of the experimental results, the mechanism of the vapor trapping chamber impacting the nucleation and growth of graphene was discussed as well.