半导体光电, 2020, 41 (2): 164, 网络出版: 2020-06-17   

基于碳管/石墨烯/GaAs双异质结自驱动的近红外光电探测器

Self-powered Near-infrared Photodetector Based on Single-walled Carbon Nanotube/Graphene/GaAs Double Heterojunctions
作者单位
上海交通大学 电子信息与电气工程学院 薄膜与微细技术教育部重点实验室, 上海 200240
摘要
基于单壁碳纳米管(SWCNT)/单层石墨烯/GaAs双异质结结构构筑了自驱动近红外光电探测器, 利用GaAs优异的光电特性和石墨烯的高载流子迁移率特点, 该光电探测器在无偏压情况下光电响应率可达393.8mA/W, 比探测率达到6.48×1011Jones, 开关比为103。而且, 利用半导体性SWCNT对近红外光子的高吸收特性以及SWCNT/石墨烯异质结对SWCNT产生光生载流子进行有效分离, 使得该双异质结光电器件的光谱响应可拓展至1064nm, 突破了GaAs自身的响应极限860nm。
Abstract
In this paper, a self-powered near-infrared photodetector was fabricated based on a single-walled CNT (SWCNT) /graphene/GaAs double heterojunction structure. Due to the excellent photoelectric properties of GaAs and high carrier mobility of graphene, the photodetector exhibits a high photoresponsivity, detectivity and the on/off ratio of 393.8mA/W, 6.48×1011Jones and 103, respectively. More importantly, combing the near-infrared light absorption of SWCNTs with the photo-generated carriers effectively separated by the SWCNT/graphene heterojunction, the spectral response of the double heterojunction device is broadened to 1064nm, breaking through the absorption limit of GaAs itself.

陶泽军, 霍婷婷, 尹欢, 苏言杰. 基于碳管/石墨烯/GaAs双异质结自驱动的近红外光电探测器[J]. 半导体光电, 2020, 41(2): 164. TAO Zejun, HUO Tingting, YIN Huan, SU Yanjie. Self-powered Near-infrared Photodetector Based on Single-walled Carbon Nanotube/Graphene/GaAs Double Heterojunctions[J]. Semiconductor Optoelectronics, 2020, 41(2): 164.

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