基于半导体制造工艺, 制备了尺寸为50μm×80μm的蓝光氮化镓(GaN)基Micro-LED芯片。芯片的正向导通电压在2.55V左右; 测试了10颗LED芯片在1mA注入电流下的电压值, 得到的最大值和最小值分别为3.24和3.12V, 波动幅度在4%以内。在1mA的测试电流下, 测试芯片的EL光谱峰值波长和半高宽分别为453和14.4nm, 芯片的外量子效率可达12.38%, 芯片发光均匀且亮度很大。测试结果表明, 所制备的Micro-LED芯片具有优异的光电性能。此外, 通过激光剥离技术, 实现了Micro-LED芯片的转移。研究了激光剥离工艺对Micro-LED芯片光电性能的影响, 发现在优化的工艺条件下, 激光剥离对芯片的光电性能几乎无影响。这些结果有助于小间距微尺寸LED芯片阵列及显示技术的研究。

Based on semiconductor manufacturing process, blue light GaN-based Micro-LED chips with a size of 50μm×80μm were prepared. The forward voltage of the chips is about 2.55V. The voltage of ten LED chips under the injection current of 1mA were tested, and the maximum value of 3.24V and minimum value of 3.12V were obtained with a fluctuation amplitude within 4%. At the test current of 1mA, the peak wavelength and FWHM of the EL spectrum of the test chips are 453nm and 14.4nm, respectively. The external quantum efficiency of the chip can reach up to 12.38%, and the chip emits very uniform light and presents a high brightness. The test results show that the prepared Micro-LED chips have excellent photoelectric performance. In addition, Micro-LED chips transfer was achieved through laser lift-off technology, and the influence of laser lift-off process on the photoelectric performance of Micro-LED chips was studied. It is found that the laser lift-off process almost has no effect on the photoelectric performance of the chips under optimized process conditions.