以采用化学气相沉积法(CVD)生长的单层石墨烯为导电电极、四硫代钼酸铵水溶液为电解质, 通过电化学沉积法合成了二硫化钼/石墨烯(MoS2/graphene)垂直异质结。将合成的MoS2/graphene垂直异质结通过CVD在氢气(H2)和氩气(Ar)环境下进行退火处理。利用拉曼光谱、X射线衍射仪(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)系统地分析了样品的物质成分、表面形貌和厚度等。这种简单、环保、低成本的制备大面积MoS2/graphene垂直异质结的方法具有普遍适用性, 为其他垂直异质结的制备开辟了新途径。

By using the monolayer graphene grown by chemical vapor deposition (CVD) as the conductive electrode and ammonium tetrathiomolybdate aqueous solution as the electrolyte, the vertical heterojunctions of molybdenum disulfide-graphene (MoS2/graphene) were synthesized by electrochemical deposition method. The synthesized MoS2/graphene vertical heterojunction was annealed by chemical vapor deposition(CVD) system under the hydrogen and argon atmosphere. The Raman spectroscopy (Raman), X-ray diffraction (XRD), scanning electron microscope (SEM), and atomic force microscope (AFM) were used to systematically analyze the material composition, surface morphology, and thickness of the resulting MoS2/graphene vertical heterojunctions. This simple, environment-friendly, and low-cost method for synthesizing large-area MoS/graphene vertical heterojunctions has universal applicability, which opens a new way for the synthesis of other vertical heterojunctions.