对比分析了单量子阱TE模和TM模增益谱及其折射率变化谱随应变、阱宽的变化规律,同时分析了应变和阱宽对兼顾增益和折射率变化的影响。进一步考虑波导的光学限制因子及多量子阱阱间载流子浓度分布的不均匀性,提出一种多参数调配方法,据此设计出C波段内兼顾增益谱和折射率变化谱的低偏振混合应变多量子阱结构。最后,通过分析选定合适的载流子浓度。当载流子浓度为3.22×1024m-3时,TE模和TM模3 dB谱宽交叠区面积分别为84.81 nm/cm和74.50 nm/cm,增益偏振相关性和折射率偏振相关性分别保持在4%和6%以内。该研究结果有助于未来全光网络中相关器件的优化设计。

In this paper, the spectrum characteristics of gain and refractive index change of the TE and TM modes of single quantum well versus well width and strain are comparatively analyzed. The influences of the above factors on balancing gain and refractive index change are further investigated by introducing overlap region area of 3dB spectrum width, and the physical mechanisms are dissected. Further considering the optical confinement factor of the waveguide and the non-uniformity of the carrier concentration distribution in the multiple quantum well, a multi-parameter matching method is proposed, based on which a low-polarization quantum well material that can balance the gain spectrum and the refractive index change spectrum in the C-band (1530~1565 nm) is designed. Finally, the effect of carrier concentration is analyzed and the appropriate carrier concentration is selected. When the carrier concentration is 3. 22×1024m-3, the overlap region area of 3dB spectrum width of the two spectra of the TE and TM mode are 84. 81 nm/cm and 74. 50 nm/cm, respectively, and the gain polarization dependence and refractive index polarization dependence are maintained at within 4% and 6%. The results of this paper will help the optimal design of related devices in the all-optical network in the future.