概述了本课题组在KDP类晶体快速生长领域的研究及进展情况。通过集成生长设备的管道系统、升级连续过滤系统、研发晶体生长过程的实时监控系统以及高精度退火设备, 实现晶体生长系统的集成化; 通过数值模拟优化晶体表面流场状态、全流程量化控制实现晶体稳定生长以及精密热退火进一步提升晶体性能; 针对点籽晶快速生长KDP类晶体中存在的柱锥交界面问题, 相继提出了长籽晶锥区限制生长法和长籽晶自由生长法, 为大尺寸高性能KDP类晶体生长提供新的技术方案。

The research progress on rapidly grown KDP-type crystals is summarized. By integrating the pipe system of the growth equipment, upgrading the continuous filtration system, developing the real-time monitoring system of the crystal growth process and the high-precision thermal annealing equipment, the integration of the crystal growth system is realized. The flow field of crystal surface is optimized through numerical simulation, the whole process is controlled quantitatively to realize the stable crystal growth and the crystal performance is further improved through high-precision thermal annealing. In order to solve the problem of pyramid-prism boundary of “point-seed” rapidly grown KDP-type crystals, the pyramidal-restriction long-seed growth method and the free-long-seed growth method are proposed in succession, which provide new technical schemes for the growth of large size and high performance KDP-type crystals.