通过0.18 μm标准CMOS工艺设计并制备了一种MOS结构的硅基发光器件。该光源器件在一个n阱中设计了两个相同的PMOS, 分别利用p+源/漏区与n阱形成的p+n结进行反偏雪崩击穿而发射可见光。测试结果显示, 该光源器件在正偏状态下的开启电压为0.8 V, 在6 V的反偏电压下发生雪崩击穿, 能够发出黄色的可见光, 发光频谱范围为420~780 nm。本文对比了0.5 μm和2 μm两个不同发光窗口宽度的测试结果, 发现该光源器件在更小发光窗口具有更高的发光强度和更好的发光均匀度, 该特征与发光器件的反向电流密度分布和光在金属电极间的反射有关。研究成果在片上硅基光电集成回路中具有一定的应用价值。

In this paper, a MOS-like silicon light-emitting device is designed and fabricated under 0.18 μm standard CMOS technology. The device consists of two identical PMOS in the same n-well, and uses the p+n junctions formed between p+ source/drain region and n-well for avalanche breakdown to emit visible light. The measurement results indicate that the device has a turn-on voltage of 0.8 V at forward bias, and avalanche breakdown at reverse bias voltage of 6 V, which can emit yellow visible light with spectrum of 420-780 nm. By comparing the measurement results of two MOS-like silicon LEDs with different light window widths of 0.5 μm and 2 μm, it is found that the silicon LED with smaller light window has higher luminescent intensity and better uniformity, which is related to the distribution of reverse current density and the light reflection between metal electrodes. The research of this paper has attractive application in silicon-based optoelectronic integrated circuits on chip.