人工晶体学报, 2020, 49 (7): 1176, 网络出版: 2020-08-18  

硫脲掺杂金刚石的高温高压合成及FT-IR光谱研究

Synthesis of Diamond Crystal with CH4N2S Additive at HPHT Conditions and the Study of FT-IR Spectra
作者单位
1 铜仁学院物理与电子工程系,铜仁 554300
2 湖南科技大学物理与电子科学学院,湘潭 411201
3 深圳大学机电与控制工程学院,深圳 518060
摘要
利用温度梯度法,在6.5 GPa、1 300~1 350 ℃的高温高压极端物理条件下,通过在FeNiCo-C合成体系中添加硫脲(CH4N2S)成功合成了金刚石,所合成的晶体呈现出黄色且具有六-八面体形貌。利用扫描电镜(SEM)对所合成金刚石的表面形貌进行了表征,测试结果表明,随着合成体系中CH4N2S添加量的逐渐增加,所合成金刚石的表面变得逐渐粗糙。借助傅里叶红外(FT-IR)光谱对金刚石样品内部的氮、氢缺陷以及化学键结构进行了测试分析,结果表明,金刚石中的氢元素以-CH3, -CH2-, C-H形式存在,而其内部的氮杂质以C心、A心形式存在。此外,在3 300~3 600 cm-1观察到NH的吸收带。
Abstract
Diamond crystals were synthesized in FeNiCo-C system with CH4N2S additive at pressure of 6.5 GPa and temperature ranging from 1 300 ℃ to 1 350 ℃, using temperature gradient (TGM) method. The obtained diamond crystals displays yellow color and exhibits cub-octahedral morphology. The surface morphology was characterized by SEM and the results indicate that the surface of the obtained diamond become rougher and rougher with the increasing of CH4N2S addition content in the synthesis system. Furthermore, the Nitrogen (N) and Hydrogen (H) defects and chemical bond structures were analyzed in detail with the help of FT-IR spectra. FT-IR results display that H element exits in the forms of -CH3, -CH2-, C-H and N defects locate in the forms of C, A centers. Additionally, the band locating at 3 300-3 600 cm-1 was observed, attributing to NH absorption.

李勇, 廖江河, 王应, 陈宁, 佘彦超. 硫脲掺杂金刚石的高温高压合成及FT-IR光谱研究[J]. 人工晶体学报, 2020, 49(7): 1176. LI Yong, LIAO Jianghe, WANG Ying, CHEN Ning, SHE Yanchao. Synthesis of Diamond Crystal with CH4N2S Additive at HPHT Conditions and the Study of FT-IR Spectra[J]. Journal of Synthetic Crystals, 2020, 49(7): 1176.

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