采用射频磁控溅射技术和热退火技术在石英衬底上制备了微晶态Ga2O3薄膜。利用X射线衍射仪(XRD)、拉曼光谱(Raman)、紫外-可见-红外分光光度计(UV-Vis-IR)以及X射线光电子能谱仪(XPS)等手段对薄膜结构、光学特性以及化学组分进行了系统研究。结果表明，制备的Ga2O3薄膜呈非晶态，退火处理后，薄膜由非晶态转变为含β相Ga2O3的微晶薄膜，随退火温度升高，薄膜内部微晶成分不断增加，但最终在石英衬底上制备的薄膜并未全部转换成全晶态薄膜(β-Ga2O3)。基于非晶和微晶Ga2O3薄膜制备了金属-半导体-金属(MSM)结构的日盲深紫外探测器，发现非晶Ga2O3薄膜基器件表现出更高的光响应，而微晶Ga2O3薄膜基器件则具有更低的暗电流和更快的响应速度。

Microcrystalline Ga2O3 thin films were prepared on quartz substrates by radio frequency magnetron sputtering technology and thermal annealing technology. Using X-ray diffractometer(XRD), Raman spectroscopy, ultraviolet-visible-infrared spectrophotometer(UV-Vis-IR) and X-ray photoelectron spectrometer(XPS)， the structure, optical properties and the chemical components were systematically studied. The results show that the prepared Ga2O3 film is amorphous. After the post-annealing process, all the films are changed from amorphous to microcrystalline films containing β-phase Ga2O3. With the rising of annealing temperature, the microcrystalline composition inside the film continues to increase. However, not all the thin films prepared on the quartz substrate were converted into fully crystalline thin films(β-Ga2O3). Based on amorphous and microcrystalline Ga2O3 thin films, metal-semiconductor-metal(MSM) structured solar blind deep ultraviolet photodetectors were fabricated. It was found that amorphous Ga2O3 thin film-based device shows higher optical response, while microcrystalline Ga2O3 thin film-based device shows lower dark current and faster response speed.