红外, 2020, 41 (8): 15, 网络出版: 2020-11-04   

InAs/GaSbⅡ类超晶格长波红外探测器背面减薄技术研究

Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors
作者单位
华北光电技术研究所,北京 100015
摘要
在长波红外波段,InAs/GaSb Ⅱ类超晶格材料具有比碲镉汞材料更优越的性能,因此得到了广泛研究。对InAs/GaSb Ⅱ类超晶格红外探测器芯片的背面减薄技术开展了一系列试验。针对<100>GaSb单晶片进行了单点金刚石机床精密加工、机械化学抛光和化学抛光方法研究,并去除了加工损伤。InAs/GaSb Ⅱ类超晶格红外器件的流片结果表明,长波探测器组件获得了较好的红外成像图片,提高了InAs/GaSb Ⅱ类超晶格长波红外探测器芯片的研制水平。
Abstract
In long-wave infrared region, InAs/GaSb type-Ⅱ superlattice material has more superior performance than HgCdTe, thus has been widely studied. A series of experiments were carried out on the InAs/GaSb type-Ⅱ superlattice infrared detector to improve the technology level of back thinning. For <100> GaSb single wafers, different single-point diamond turning (SPDT), mechanical chemical polishing and chemical polishing methods were studied. The machining damage was removed. Through the experiments of InAs/GaSb type-Ⅱ superlattice infrared devices, good infrared imaging pictures were obtained by the long-wave detector assembly, which can improve the technology level of InAs/GaSb type-Ⅱ superlattice long-wave infrared detector.

程雨, 鲍英豪, 肖钰, 李春领, 亢喆, 刘铭. InAs/GaSbⅡ类超晶格长波红外探测器背面减薄技术研究[J]. 红外, 2020, 41(8): 15. CHENG Yu, BAO Ying-hao, XIAO Yu, LI Chun-ling, KANG Zhe, LIU Ming. Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors[J]. INFRARED, 2020, 41(8): 15.

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