人工晶体学报, 2020, 49 (9): 1631, 网络出版: 2020-11-11   

基于载流子选择性接触的N型晶硅电池钝化特性研究

Passivation Characteristics of N-Type Crystal Silicon Cell Based on Carrier Selective Contact
作者单位
1 国家电投集团西安太阳能电力有限公司,西安 710100
2 西安理工大学电子工程系,西安 710048
摘要
为了研究载流子选择性接触结构在N型晶硅电池钝化特性,本文设计了专门的材料结构。分析对比了不同掺杂浓度分布的材料结构在退火后、沉积SiNx∶H薄膜后及烧结后隐开路电压值的变化,并对其钝化机理进行了分析。研究结果表明隐开路电压值对掺杂浓度分布非常敏感。随着掺杂浓度分布进入硅基体的“穿透”深度增加,相对应地退火后、SiNx∶H薄膜沉积后及烧结后隐开路电压值均呈现先增加后减小的趋势,且样片沉积SiNx∶H薄膜后隐开路电压的增加幅度也逐渐减小,而样片烧结后隐开路电压值又出现不同幅度的下降,且隐开路电压值的下降幅度逐渐减小。通过适当的掺杂工艺,可以使得烧结后的隐开路电压均值达到738 mV。
Abstract
In order to study the passivation characteristics of the carrier selective contact structure in N-type crystalline silicon cells, a special material structure was designed. The change of implied open circuit voltage after annealing, deposition of SiNx∶H film and sintering of the materials structure with different doping concentration distribution were compared and the passivation mechanism was analyzed. The results show that the implied open circuit voltage is very sensitive to the doping concentration distribution of structure. The ‘penetrating diffusion’ increase across poly-Si/SiOx into the c-Si base, the corresponding implied open circuit voltage increases firstly and decreases later after annealing, SiNx∶H film deposition and sintering. After the samples were deposited with SiNx∶H thin film, the increase of the implied open circuit voltage gradually decreases; and the value of implied open circuit voltage samples show a tends to decline after sintering, and the declining trend of the implied open circuit voltage gradually decreases. When a suitable doping process is selected, the average value of the implied open circuit voltage can reach 738 mV after firing.

张天杰, 刘大伟, 倪玉凤, 杨露, 魏凯峰, 宋志成, 林涛. 基于载流子选择性接触的N型晶硅电池钝化特性研究[J]. 人工晶体学报, 2020, 49(9): 1631. ZHANG Tianjie, LIU Dawei, NI Yufeng, YANG Lu, WEI Kaifeng, SONG Zhicheng, LIN Tao. Passivation Characteristics of N-Type Crystal Silicon Cell Based on Carrier Selective Contact[J]. Journal of Synthetic Crystals, 2020, 49(9): 1631.

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