人工晶体学报, 2020, 49 (8): 1534, 网络出版: 2020-11-11
Ge掺杂β-Ga2O3晶体的发光性能研究
Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals
摘要
采用浮区法(FZ)生长Ge掺杂β-Ga2O3晶体, 利用XRD和Raman光谱研究了掺杂对晶体结构的影响。透射光谱测试表明, 随着Ge离子掺杂浓度增加, Ge∶β-Ga2O3晶体光学带隙增大。在4.67 eV紫外光激发下, Ge∶β-Ga2O3晶体的发光强度与β-Ga2O3晶体相当, 发光衰减时间比β-Ga2O3晶体更快。
Abstract
Ge-doped β-Ga2O3 crystals were grown by the Floating Zone (FZ) method, and the doping effects on the crystal structures were investigated by XRD and Raman spectroscopy. The optical transmission spectra revealed that the optical bandgaps of Ge∶β-Ga2O3 crystals increase with the increase of Ge doping concentration. Under ultra-violet excitation of 4.67 eV, the emission intensities of Ge∶β-Ga2O3 crystals are comparable to β-Ga2O3 crystal, while the decay time is faster.
何诺天, 唐慧丽, 刘波, 张浩, 朱智超, 赵衡煜, 徐军. Ge掺杂β-Ga2O3晶体的发光性能研究[J]. 人工晶体学报, 2020, 49(8): 1534. HE Nuotian, TANG Huili, LIU Bo, ZHANG Hao, ZHU Zhichao, ZHAO Hengyu, XU Jun. Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals[J]. Journal of Synthetic Crystals, 2020, 49(8): 1534.