介绍了GaAs/AlGaAs量子阱红外探测器(Quantum Well Infrared Photodetector, QWIP)的低电阻欧姆接触研究情况。结合热处理工艺, 通过测试I--V特性对Ni/AuGe/Au金属体系的不同搭配进行了实验, 确定了适合n+GaAs/AlGaAs的电极体系, 并对沉积金属后的热处理条件进行了初步研究。在400 ℃、氮气氛围、60 s的条件下, 采用传输线模型计算后, 在n+GaAs（1×1018 cm-3）上取得了比接触电阻为3.07×10-5 Ω·cm2的实验结果。

The investigation of low resistance ohmic contact on GaAs/AlGaAs quantum well infrared detector is introduced. Combined with the heat treatment process, through testing the I--V characteristics, experiments are conducted on different combinations of Ni/AuGe/Au metal systems to determine the electrode system suitable for n+GaAs/AlGaAs. The heat treatment conditions after metal deposition are preliminary studied. Under the annealing conditions of 400 ℃, nitrogen atmosphere and 60 s, the transmission line model is used to obtain the specific ohmic contact resistance of 3.07×10-5 Ω·cm2 on n+GaAs(1×1018 cm-3).