p型MgZnO的制备一直是高效紫外发光和日盲紫外探测器件研究领域的重要课题之一。本文针对N掺杂p型MgZnO薄膜材料中存在的空穴浓度低、电阻率高等科学问题, 采取磁控溅射技术, 利用氮气与氩气混合气体分别溅射MgZnO陶瓷靶和B-N共掺杂MgZnO 陶瓷靶的方法,制备出N掺杂和B-N共掺杂MgZnO薄膜。 通过Hall测量表征发现两种薄膜均呈现p型导电特性, 与N掺杂MgZnO相比, B-N共掺MgZnO的空穴浓度从5.53×1015 cm-3提高到2.63×1017 cm-3, 而迁移率变化并不明显(从0.83 cm2·V-1·s-1减小到0.75 cm2·V-1·s-1), 导致电阻率从1.36×103 Ω·cm减小到31.70 Ω·cm。通过XRD和XPS表征揭示了在B-N共掺MgZnO中, B替代Mg或Zn, N除了具有NO和(N2)O两种掺杂状态外, 还有以单原子占据O位但与B成键的第三种掺杂状态, 证明B掺杂可以提高N在MgZnO中的受主掺杂浓度, 但对空穴散射影响很小, 从而提高p型MgZnO的空穴浓度, 降低电阻率。

Preparation of p-type MgZnO film is still one subject of high-efficiency ultraviolet luminescence and solar-blind ultraviolet photodetectors devices. In this work, aiming at the problems of low carrier concentration and high resistivity in N-doped p type MgZnO film, using 99.99% pure nitrogen and argon as sputtering gas, p-type B-N co-doped MgZnO film and N doped MgZnO film were deposited on quartz substrate by radio frequency magnetron sputtering with B-N co-doped MgZnO target and N doped MgZnO target respectively. It is found that the prepared MgZnO films show p-type electrical properties by a Hall effect measurement. Compared with N-doped MgZnO film, the carrier concentration of B-N co-doped MgZnO film is increased from 5.53×1015 cm-3to 2.63×1017 cm-3, the Hall mobility is decreased from 0.83 cm2·V-1·s-1to 0.75 cm2·V-1·s-1, and the resistivity is decreased remarkably from 1.36×103 Ω·cm to 31.70 Ω·cm. The measurement of XRD and XPS reveals that B occupies Zn site or Mg site and N has three doping states. The first state is that N atom occupies O site which is the nearest neighbor with Zn or Mg atom, forming NO. The second state is that N2 occupies O site, forming (N2)O. The third state is that N atom occupies O site which is the nearest neighbor with B atom, forming B-N pair. Therefore, B doping can improve the N dopant acceptor concentration, affect little on holes scattering and reduce resistivity of p-type MgZnO.